1 www.fairchildsemi.com ?2006 fairchild semiconductor corporation FFPF30UP20S rev. b FFPF30UP20S 30 a, 200 v, ultrafast diode FFPF30UP20S features ? ultrafast recovery t rr = 50 ns (@ i f = 30 a) ? max forward voltage, v f = 1.15 v (@ t c = 25c) ? reverse voltage, v rrm = 200 v ? avalanche energy rated ? rohs compliant applications ? output rectifiers ? switching mode power supply ? free-wheeling diode for motor a pplication ? power switching circuits absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter value unit v rrm peak repetitive reverse voltage 200 v v rwm working peak reverse voltage 200 v v r dc blocking voltage 200 v i f(av) average rectified forward current @ t c = 85 c3 0 a i fsm non-repetitive peak surge current 60hz single half-sine wave 300 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max unit r jc maximum thermal resistance, junction to case 3.0 c/w device marking device package reel size tape width quantity f30up20s FFPF30UP20Stu to-220f - - 50 1. cathode 2. anode 1 to-220f 12 1. cathode 2. anode tm february 2006 30 a, 200 v, ultrafast diode the FFPF30UP20S is a ultrafast diode with low forward voltage drop. this device is intended for use as freewheeling and c lamping diodes in a variety of switching power supplies and other power switching applications. it is specially suited for use in switc hing power supplies and industrial application.
2 www.fairchildsemi.com FFPF30UP20S 30 a, 200 v, ultrafast diode electrical characteristics t c = 25c unless otherwise noted * p uls e test: pulse width=300 s, duty cycle =2% test circuit and waveforms symbol parameter min. typ. max. unit v f * i f = 30 a i f = 30 a t c = 25 c t c = 100 c - - - - 1.15 1.0 v v i r * v r = 200 v v r = 200 v t c = 25 c t c = 100 c - - - - 100 500 a a t rr i f = 1 a, di/dt = 100 a/ s, v cc = 30 v i f = 30 a, di/dt = 200 a/s , v cc = 130 v t c = 25 c t c = 25 c - - - - 40 50 ns ns t a t b q rr i f = 30 a, di/dt = 200 a/ s, v cc = 130 v t c = 25 c t c = 25 c t c = 25 c - - - 22 14 67 - - - ns ns nc w avl avalanche energy (l = 40 mh) 20 - - mj ?2006 fairchil d semiconductor corporation ff pf30up20s rev. b
3 www.fairchildsemi.com FFPF30UP20S 30 a, 200 v, ultrafast diode typical performance characteristics figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 t c = 100 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 0 50 100 150 200 1e-3 0.01 0.1 1 10 t c = 125 o c t c = 100 o c t c = 75 o c reverse current, i r [ua] reverse voltage, v r [v] t c = 25 o c 0.1 1 10 100 0 100 200 300 400 500 600 junction capacitance, c j [pf] reverse voltage, v r [v] f = 1mhz 100 200 300 400 500 25 30 35 40 45 50 55 60 65 70 t c = 125 o c t c = 75 o c reverse recovery time, t rr [ns] di/dt, [a/ s] t c = 25 o c i f = 30a 100 200 300 400 500 0 2 4 6 8 10 12 14 16 18 20 t c = 125 o c t c = 75 o c reverse recovery current, irr [a] di/dt, [a/ s] t c = 25 o c i f = 30a 60 70 80 90 100 110 120 130 140 150 0 5 10 15 20 25 30 35 40 average forward current, i f(av) [a] case temperature, t c [ o c] dc ?200 6 f airchild semiconductor corporation ff pf30up20s rev. b
package demensions dimensions in millimeters FFPF30UP20S 30 a, 200 v, ultrafast diode to-220f 2l 2.54 0.20 0.80 0.10 0.35 0.10 2.76 0.20 max1.47 (1.00x45) (0.70) 3.30 0.10 15.87 0.20 (1.80) (6.50) 6.68 0.20 15.80 0.20 9.75 0.30 12.00 0.20 4.70 0.20 10.16 0.20 9.40 0.20 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 4 www.fairchildsemi.com ?200 6 f airchild semiconductor corporation FFPF30UP20S rev. b
FFPF30UP20S 30 a, 200 v, ultrafast diode 5 www.fairchildsemi.com ?2006 fairchil d semiconductor corporation FFPF30UP20S rev. b
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